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Research on chemical mechanical polishing mechanism of novel diffusion barrier Ru for Cu interconnect

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Cheng, Jie Unknown Springer Nature Singapore Pte Ltd. (Singapore, 2018) (eng) English 9789811061653 Springer theses, recognizing outstanding Ph.D. research 1st ed. RUTHENIUM; Unknown This thesis addresses selected unsolved problems in the chemical mechanical polishing process (CMP) for integrated circuits using ruthenium (Ru) as a novel barrier layer material. Pursuing a systematic approach to resolve the remaining critical issues in the CMP, it first investigates the tribocorrosion properties and the material removal mechanisms of copper (Cu) and Ru in KIO4-based slurry. The thesis subsequently studies Cu/Ru galvanic corrosion from a new micro and in-situ perspective, and on this basis, seeks ways to mitigate corrosion using different slurry additives. The findings presented here constitute a significant advance in fundamental and technical investigations into the CMP, while also laying the groundwork for future research.

Physical dimension
1 online resource (xviii, 137 p.) Unknown ill.

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