UnknownMeneghesso, Gaudenzio
Springer International Publishing (Cham, Switzerland , 2018) (eng) English9783319779942Integrated circuits and systems1st ed. TRANSISTORS; UnknownThis book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion. Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers; Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency and lower cost power conversion; Enables design of smaller, cheaper and more efficient power supplies.
Physical dimension
1 online resource (xiii, 232 pages).Unknownill. (in color.)
Summary / review / table of contents
Chapter1: Taking the next step in GaN: bulk GaN substrates and GaN-on-Si epitaxy for electronics --
Chapter2: Lateral GaN HEMT structures --
Chapter3: Vertical GaN Transistors for Power Electronics --
Chapter4: Reliability of GaN-based Power devices --
Chapter5: Validating GaN robustness --
Chapter6: Impact of Parasitics on GaN Based Power Conversion --
Chapter7: GaN in AC/DC Power Converters --
Chapter8: GaN in Switched Mode Power Amplifiers.